Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications

The strong in-plane anisotropy and quasi-1D electronic structures of transition-metal trichalcogenides (MX3; M = group IV or V transition metal; X = S, Se, or Te) have pronounced influence on moulding the properties of MX(3)materials. In particular, the infinite trigonal MX(6)prismatic chains running parallel to theb-axis are responsible for the manifestation of anisotropy in these materials. Several marvellous properties, such as inherent electronic, optical, electrical, magnetic, superconductivity, and charge density wave (CDW) transport properties, make transition-metal trichalcogenides (TMTCs) stand out from other 2D materials in the fields of nanoscience and materials science. In addition, with the assistance of pressure, temperature, and tensile strain, these materials and their exceptional properties can be tuned to a superior extent. The robust anisotropy and incommensurable properties make the MX(3)family fit for accomplishing quite a lot of compelling applications in the areas of field effect transistors (FETs), solar and fuel cells, lithium-ion batteries, thermoelectricity,etc.In this review article, a precise audit of the distinctive crystal structures, static and dynamic properties, efficacious synthesis schemes, and enthralling applications of quasi-1D MX(3)materials is made.