期刊
PHYSICAL REVIEW B
卷 102, 期 14, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.102.140101
关键词
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资金
- National Natural Science Foundation of China [52032001, 51671126, 11674077]
- Fundamental Research Funds for the Central Universities [2232019A3-13, 2232018D3-32]
- Shenzhen Peacock Plan [KQTD2016053019134356]
- Guangdong Innovative & Entrepreneurial Research Team Program [2016ZT06C279, 2017ZT07C062]
- Key Research Platforms and Projects of Universities in Guangdong Province [2018KZDXM062]
- Shenzhen Development and Reform Commission Foundation for Shenzhen Engineering Research Center for Frontier Materials Synthesis at High Pressure
- US NSF [DMR-1506669, DMREF-1626967]
- Research Platform for Crystal Growth & Thin-Film Preparation at SUSTech
- Shenzhen PengchengScholarship Program
We report two reversible pressure-induced isosymmetric phase transitions in a-Ag 2 S that are accompanied by two compressive anomalies at 7.5 and 16 GPa, respectively. The first transition arises from a sudden and drastic puckering of the wrinkled Ag-S layers, which leads to an anomalous structural softening at high pressure and gives rise to the ultrahigh compressive ductility in alpha-Ag2S. The second transition stems from a pressure-driven electronic state crossover from a conventional semiconductor to a topological metal. The band-crossing points near the Fermi energy form a nodal-line structure due to the preservation of the time-reversal and space-inversion symmetries under pressure. Our findings not only reveal the underlying mechanism responsible for the ultrahigh ductility in this class of inorganic semiconductors, but also provide a distinctive member to the growing family of topological metals and semimetals.
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