Sensitive Characteristics of Hydrogen Sensors Based on Pt/SnO2 Nanosized Material

Nanosized semiconductor tin dioxide appropriate for creation of adsorption-semiconductor sensors was synthesized through a sol-gel route. Addition of Pt via impregnation technique allows to obtain highly sensitive sensors to hydrogen micro concentration in air with relatively low power consumption. Properties of such sensors were explained by the role of oxygen chemisorbed on the semiconductor surface in formation of response to reducing gases. The nanosized nature of tin dioxide particles in the obtained semiconductor materials were confirmed by the X-ray diffraction method (XRD) and transmission electron microscopy (TEM) data.