4.4 Article

High voltage gain half-bridge quasi-switched boost inverter with reduced voltage stress on capacitors

期刊

IET POWER ELECTRONICS
卷 10, 期 9, 页码 1095-1108

出版社

INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/iet-pel.2016.0291

关键词

switching convertors; bridge circuits; capacitors; passive networks; signal flow graphs; high voltage gain half-bridge quasi-switched boost inverter; reduced voltage stress; capacitor; half-bridge Z-source inverter; passive component; small-signal model; steady-state analysis; signal flow graph; dynamic response

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In this study, an improved topology of half-bridge switched boost inverter with low voltage stress on capacitors is proposed. The proposed half-bridge quasi-switched boost inverter, in comparison with the half-bridge Z-source inverter with two Z-networks, has less passive components. Moreover, the proposed topology generates high voltage gain comparing with the conventional topologies and has stable operation. Producing zero voltage level at the output is the other advantage of the proposed inverter, in comparison with the conventional half-bridge inverter. The small-signal model and steady-state analysis of the proposed inverter in different operating modes are given. Moreover, signal flow graph using small-signal analysis and design considerations are derived. In addition, switching pattern for the proposed inverter is presented and power losses are calculated. A comprehensive comparison is done between the proposed topology and conventional inverters from different points of view such as number of components, volume, inrush current, tolerance of shoot-through and so on. Finally, the simulation and experimental results are given to demonstrate dynamic response, effect of undesirable shoot-through and the accuracy of the given theories.

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