4.4 Article

Characterisation of a silicon drift detector for high-resolution electron spectroscopy

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ELSEVIER
DOI: 10.1016/j.nima.2020.164474

关键词

Silicon drift detector; High resolution; Beta decay; SDD; Electron spectroscopy; Scanning electron microscope; SEM

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  1. INFN, Italy through TRISTAN
  2. Max Planck Institute for Physics, Germany

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Silicon Drift Detectors, widely employed in high-resolution and high-rate X-ray applications, are considered here with interest also for electron detection. The accurate measurement of the tritium beta decay is the core of the TRISTAN (TRitium Investigation on STerile to Active Neutrino mixing) project. This work presents the characterisation of a single-pixel SDD detector with a mono-energetic electron beam obtained from a Scanning Electron Microscope. The suitability of the SDD to detect electrons, in the energy range spanning from few keV to tens of keV, is demonstrated. Experimental measurements reveal a strong effect of the detector's entrance window structure on the observed energy response. A detailed detector model is therefore necessary to reconstruct the spectrum of an unknown beta-decay source.

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