4.6 Article

Great enhancement of Curie temperature and magnetic anisotropy in two-dimensional van der Waals magnetic semiconductor heterostructures

期刊

PHYSICAL REVIEW B
卷 102, 期 14, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.102.144443

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资金

  1. National Key R&D Program of China [2018YFA0305800]
  2. Strategic Priority Research Program of the Chinese Academy of Sciences [XDB28000000]
  3. National Natural Science Foundation of China [11834014, Y81Z01A1A9, 12074378]
  4. Beijing Municipal Science and Technology Commission [Z191100007219013]
  5. Chinese Academy of Sciences [Y929013EA2, E0EG4301X2]
  6. University of Chinese Academy of Sciences [110200M208]
  7. Strategic Priority Research Program of Chinese Academy of Sciences [XDB33000000]
  8. Beijing Natural Science Foundation [Z190011]

向作者/读者索取更多资源

In two-dimensional (2D) magnetic systems, large magnetic anisotropy is needed to stabilize the magnetic order according to Mermin-Wagner theorem. Based on density-functional theory (DFT) calculations, we propose that the magnetic anisotropic energy (MAE) of 2D ferromagnetic (FM) semiconductors can be strongly enhanced in van der Waals heterostructures by attaching a nonmagnetic semiconductor monolayer with large spin-orbit coupling. We studied Cr2Ge2Te6/PtSe2 bilayer heterostructures, where each layer has been realized in recent experiments. The DFT calculations show that the MAE of Cr2Ge2Te6/PtSe2 is enhanced by 70%, and the Curie temperature T-C is increased far beyond room temperature. A model Hamiltonian is suggested to analyze the DFT results, showing that both the Dzyaloshinskii-Moriya interaction and single-ion anisotropy contribute to the enhancement of the MAE. Based on the superexchange picture, we find that the decreased energy difference between 3d orbitals of Cr and 5p orbitals of Te contributes partially to the increase of T-C. Our present work indicates a promising way to enhance the MAE and T-C by constructing van der Waals semiconductor heterostructures, which will inspire further studies on the 2D magnetic semiconductor systems.

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