期刊
ADVANCED MATERIALS
卷 32, 期 49, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202004813
关键词
charge dynamics; dual‐ gate transistor; ferroelectric polarization; transferrable ferroelectric; van der Waals heterostructure
类别
资金
- National Natural Science Foundation of China [11804397, U19A2087]
- Hunan High-End Talent Program [2019RS1006]
Ferroelectric field-effect transistors (FeFETs) have recently attracted enormous attention owing to their applications in nonvolatile memories and low-power logic electronics. However, the current mainstream thin-film-based ferroelectrics lack good compatibility with the emergent 2D van der Waals (vdW) heterostructures. In this work, the synthesis of thin ferroelectric Na0.5Bi4.5Ti4O15 (NBIT) flakes by a molten-salt method is reported. With a dry-transferred NBIT flake serving as the top-gate dielectric, dual-gate molybdenum disulfide (MoS2) FeFETs are fabricated in a full vdW stacking structure. Barrier-free graphene contacts allow the investigation of intrinsic carrier transport of MoS2 governed by lattice scattering. Thanks to the high dielectric constant of approximate to 94 in NBIT, a metal to insulator transition with a high electron concentration of 3.0 x 10(13) cm(-2) is achieved in MoS2 under top-gate modulation. The electron field-effect mobility as high as 182 cm(2) V-1 s(-1) at 88 K is obtained. The as-fabricated MoS2 FeFET exhibits clockwise hysteresis transfer curves that originate from charge trapping/release with either top-gate or back-gate modulation. Interestingly, hysteresis behavior can be controlled from clockwise to counterclockwise using dual-gate. A multifunctional device utilizing this unique property of NBIT, which is switchable electrostatically between short-term memory and nonvolatile ferroelectric memory, is envisaged.
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