Investigation of electrical and dielectric properties of epitaxially grown Au/n-GaAs/p-Si/Al heterojunction

We aimed in our paper to construct of Au/n-GaAs/p-Si/Al structure as a Schottky barrier diode by liquid phase epitaxial growth, and study it's electrical and dielectrically properties by Current-Voltage (I-V) and capacitance-voltage (C-V) measurements. The novelty in this article is investigation of dielectric properties of Au/n-GaAs/p-Si/Al that researchers had not studied before, which encouraged us to study these properties. From investigation of dielectric parameters such as impedance, we can tune the values of real part of impedance (Z ') and imaginary (Z ''). By the variation of temperature, we found that the values of Z ' and Z '' reached maximum value at 30 degrees C and were reduced with temperature increasing, Z '' takes positive and negative values depending on temperature. The Z ' and Z '' have been verified by of The Cole-Cole diagrams. Also, the dielectric parameters such as capacitance (C), conductance (G) and tan(delta) could be controlled by variation of voltage, temperature and frequency. Electric parameters such as Ideality factors (n), series resistance (R-s), shunt resistance (R-sh), barrier height (phi(b)), rectification ratio (RR) were investigated from I-V measurement. To prove the diode behavior of Au/n-GaAs/p-Si/Al architecture, the electrical parameters using thermionic emission theory. The ideality alongside barrier height decrease with the rise of temperature and the device show intermediate rectifying ratio. Investigation of conduction mechanism asserts that space-charge-limited current prevailing in the forward bias, where schottky and pool frenkel control the transport in the reverse bias. Besides, trapping concentration factor and level were estimated in terms of Mott-Gurney law.