期刊
ADVANCED MATERIALS
卷 32, 期 50, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202004995
关键词
metal‐ to‐ insulator transition; nickelate superlattices; orbital polarization; silicon; strain
类别
资金
- international M-ERA.NET project SIOX [4288]
- H2020 project ULPEC [732642]
- Slovenian Research Agency [J2-9237, P2-0091]
- ERC CoG MINT [615759]
- PHC Van Gogh grant
- French Academy of Science
- Royal Netherlands Academy of Arts and Sciences
- European Union's Horizon 2020 research and innovation programme [823717]
- European Research Council (ERC) [615759] Funding Source: European Research Council (ERC)
Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni 3dx2-y2 orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform.
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