期刊
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
卷 30, 期 4, 页码 456-461出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TSM.2017.2756684
关键词
InGaAs MOSHEMTs; hetero-epitaxy; heterogeneous integration; InGaAs on silicon; MOCVD
类别
资金
- National Research Foundation of Singapore through the Singapore-MIT Alliance for Research and Technology's Low Energy Electronic Systems IRG
We report on the growth of In0.30Ga0.70As channel high electron mobility transistor (HEMT) epi-layers on a 200-mm Si substrate by metal-organic-chemical-vapor-deposition. The HEMT layers were grown on the Si substrate by using a similar to 3-mu m thick epitaxial buffer composing of a Ge layer, a GaAs layer, and a compositionally graded and strain relaxed InAlAs layer. The optimized epitaxy has a threading dislocation density of less than 2 x 10(7) cm(-2) and a root mean square surface roughness of similar to 6.7 nm. The device active layers include a delta-doped InAlAs bottom barrier, a similar to 15-nm thick InGaAs channel, a similar to 8-nm InGaP top barrier layer and a heavily doped InGaAs contact layer. MOSHEMTs with channel length down to 130 nm were fabricated. The devices achieve a peak transconductance of similar to 450 mu S/mu m at V-D of 0.5 V. The peak effective mobility (mu(eff)) in a device with a channel length of 20 mu m device channel was similar to 3700 cm(2)/V.s.
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