期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 11, 页码 1633-1636出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3022401
关键词
Substrates; Silicon compounds; HEMTs; MODFETs; Passivation; Performance evaluation; Gallium nitride; HEMT; III-N; N-polar GaN; SiN Passivation; W-Band; 94 GHz; mm-wave; load pull
资金
- Office of Naval Research
- Semiconductor Research Corporation (SRC)
- DARPA under the JUMP Program
This work presents recent progress in the W-band (94 GHz) power performance of N-polar GaN deep recess HEMTs grown on sapphire substrates. While SiC has been the substrate of choice to achieve the highest level of performance, sapphire substrates are a lower cost alternative. In this work we show that N-polar GaN deep recess HEMTs grown on sapphire match the power performance of a device on SiC up to 14 V with 5.1 W/mm of output power density. At 16 V the device on sapphire starts to suffer from thermal effects but still demonstrated 5.5 W/mm with an associated 20.6% power-added efficiency. This work also examines the impact of encapsulating the device in a low dielectric constant film often used for the implementation of a RF wiring environment.
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