期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 8, 期 -, 页码 1219-1226出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2020.3020118
关键词
OFETs; Logic gates; Integrated circuits; Dielectrics; Silicon; Capacitance; Printing; Internet of Everything; flexible hybrid integration; sensor integration; organic field effect transistor; printed electronics
资金
- NSFC of China [61674102, 61334008]
A highly customizable hybrid sensor system, composed of a silicon integrated circuit (IC) chip and an organic field effect transistor (OFET) transducer, is proposed for Internet of Everything (IoE). In such a system, the silicon IC chip performs high performance and complex signal processing, and the OFET transducer provides flexible or conformable large area coverage and more friendly interfaces to integrate different sensing materials. A low trap-state density OFET (LTDOFET) technology is developed for such a hybrid system, owning features of low-cost solution printing processes, low operation voltage and excellent operational stability. This technology has been implemented with various materials and processes, indicating its generality. Several sensor applications built based on this device technology are also reviewed, proving the LTDOFET technology would be promising for highly customizable sensor systems towards the IoE era.
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