期刊
ACTA MATERIALIA
卷 200, 期 -, 页码 551-558出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2020.09.032
关键词
W-N layer; Microstructure; Interface; Spin-orbit torque; Switching current
资金
- National Research Foundation of Korea - Ministry of Science and ICT [2015M3D1A1070465, 2020M3F3A2A01082591]
- University R&D program of Samsung Electronics
- National Research Foundation of Korea [2020M3F3A2A01082591, 2015M3D1A1070465] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Injecting an electrical current into a nonmagnetic layer toward the in-plane direction can reverse the magnetization direction of an adjacent ferromagnetic layer in a nonmagnet/ferromagnet heterostructure via spin-orbit torque (SOT). One of the most critical issues for memory and logic device applications is to reduce the critical current to assure low energy consumption. Herein, we report both enhanced SOT efficiency and reduced SOT-induced switching current in perpendicularly magnetized W/CoFeB heterostructures, where ultrathin tungsten nitride (W-N) layers with various N-compositions and thicknesses are placed in between W and CoFeB layers. The composition of the W-N layers affects the microstructure and, therefore, the electrical properties. The measured SOT efficiency is 0.54, and the switching current reduces to approximately one-fifth of its original value in the 0.2-nm-thick W-N layer sample containing 42 at% N. Our results suggest interface engineering is a practical approach to reduce switching current. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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