期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 8, 期 -, 页码 1317-1322出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2020.3030962
关键词
High-kappa; HfO2 gate insulator (GI); low metal contamination (LC); Ni-induced lateral crystallization (NILC); poly-Si thin-film transistors (poly-Si TFTs); complementary TFTs (C-TFTs); back-end of line (BEOL); monolithic three-dimension integrated circuits (3D-ICs)
资金
- Ministry of Science and Technology, Taiwan [MOST 109-2222-E-035-006-MY3, MOST 109-2221-E-009-160-MY3]
In this work, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with asymmetric low metal contamination Ni-induced lateral crystallization (LC-NILC) poly-Si channel and high-kappa HfO2 gate insulator (GI) have been successfully fabricated and demonstrated for the first time. The amounts of Ni diffused into the poly-Si film can be effectively reduced by Ni removal processes prior to NILC. The asymmetric LC-NILC poly-Si TFTs exhibit higher field-effect mobility (mu(FE)), steeper ideal subthreshold swing (S.S.), larger ON/OFF currents ratio (I-ON/I-OFF), better uniformity, and improved C-V curves compared to traditional NILC (T-NILC) poly-Si TFTs owing to better crystallization quality and less low metal contamination. These remarkable device characteristics and the matched complementary TFTs (C-TFTs) electrical characteristics with low I-OFF and low operation voltages make the asymmetric LC-NILC poly-Si TFTs promising for the future back-end of line (BEOL) compatible devices applications in monolithic three-dimension integrated circuits (3D-ICs).
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