期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 64, 期 1, 页码 218-225出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2016.2626962
关键词
AlGaN/GaN; degradation; HEMT; hot carrier; proton irradiation
资金
- Defense Threat Reduction Agency [HDTRA1-11-1-0023]
- AFOSR
- AFRL through the Hi-REV program
- NSF [ECCS-1508898]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1508898] Funding Source: National Science Foundation
Responses to 1.8 MeV proton irradiation and 10-keV X-ray irradiation under typical bias conditions are investigated for AlGaN/GaN HEMTs fabricated with different types of process technologies. We find that, in contrast to previous generations of process technologies, total ionizing dose effects can be significant in these devices. For proton irradiation, worst-case bias for transconductance degradation for GaN-on-SiC substrate devices is ON bias, and for devices built on free-standing GaN substrates, the worst-case bias condition is semi-ON bias. Low-frequency noise measurements demonstrate that these differences result from differences in defect types and energy distributions for the different types of devices, both before and after irradiation. These results emphasize the need to test devices under a wide range of conditions during characterization and qualification testing.
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