Top-Down Technology for Reconfigurable Nanowire FETs With Symmetric On-Currents

In this paper, a technology for top-down singlegated Schottky barrier transistor is presented exhibiting the highest symmetry of on-currents for n-and p-conductance of such silicon-on-insulator-based devices. The symmetry in the currentvoltage- characteristics is a mandatory requirement to realize circuits with reconfigurable nanowire field effect transistors (RFETs) whose channel can be switched electrostatically between n-and p-conductance. It was achieved by an oxidation-induced stressor layer covering the nanowire. Together with the demand for only a single gate potential level, this opens the route to build top-down RFET circuits. Our device features an atomically sharp Schottky junction between intruded nickel silicide and the intrinsic nanowire channel.