Performance Enhancement in N-Channel Organic Field-Effect Transistors Using Ferroelectric Material as a Gate Dielectric

Organic field-effect transistors (OFETs) were elaborated using N, N'-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C-13) as transport electron material and two polymeric insulators were used as gate dielectric: polymethyl methacrylate (PMMA), a low-k material widely used in OFETs, and poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)), a ferroelectric material that has a high relative permittivity. Several configurations using both dielectrics were studied. We report a threshold and operating voltage reduction by 3 and 2, respectively, with P(VDF-TrFE)/ PMMA gate dielectric compared to PMMA reference OFETs due to a higher capacitance value. It exhibits good performances with a mobility of 0.165cm(2)/V.s, a threshold voltage of 2.9 V, and an ON-OFF current ratio > 3 x 10(4).