期刊
ACS APPLIED NANO MATERIALS
卷 3, 期 10, 页码 10200-10208出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.0c02167
关键词
ALD; transition-metal dichalcogenide; 2D TMD; MoS2; doped semiconductor; thin film
资金
- Netherlands Organization for Scientific Research (NWO) through the Gravitation program Research Centre for Integrated Nanophotonics
- European Research Council [648787-ALD of 2DTMDs]
- Solliance
- Dutch province of Noord-Brabant
Extrinsically doped two-dimensional (2D) semiconductors are essential for the fabrication of high-performance nanoelectronics among many other applications. Herein, we present a facile synthesis method for Al-doped MoS2 via plasma-enhanced atomic layer deposition (ALD), resulting in a particularly sought-after p-type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (10(17) up to 10(21) cm(-3)) while retaining good crystallinity, mobility, and stoichiometry. This ALD-based approach also affords excellent control over the doping profile, as demonstrated by a combined transmission electron microscopy and energy-dispersive X-ray spectroscopy study. Sharp transitions in the Al concentration were realized and both doped and undoped materials had the characteristic 2D-layered nature. The fine control over the doping concentration, combined with the conformality and uniformity, and subnanometer thickness control inherent to ALD should ensure compatibility with large-scale fabrication. This makes Al:MoS2 ALD of interest not only for nanoelectronics but also for photovoltaics and transition-metal dichalcogenide-based catalysts.
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