期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 22, 期 45, 页码 26231-26240出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0cp04474a
关键词
-
资金
- National Natural Science Foundation of China (NSFC) [51471124]
- Natural Science Foundation of Shaanxi Province, China [2020JM-218, 2019JM-189]
- National Key R&D Program of China [2018YFB0905600]
Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors. However, the Schottky barrier generated by the contact between metal and semiconductor hinders the conduction of electrons, so it is necessary to effectively adjust the Schottky barrier and form a low-resistance Ohmic contact. Based on first-principles calculations, graphene/WSSe (G/WSSe) heterostructures have been established and the corresponding electronic properties have been studied. Firstly, these heterostructures form an n-type Schottky contact with a SBH of 0.35 eV and a p-type Schottky contact with a SBH of 0.66 eV at their respective interfaces. In addition, the Schottky contact can be significantly adjusted by changing the interlayer coupling or applying an external biaxial strain, and an Ohmic contact could also be formed under the biaxial strain. This study not only offers a basic understanding of G/WSSe heterostructures, but also provides a reference for the application of G/WSSe heterostructures in optoelectronic and nanoelectronic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据