期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 53, 期 9, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2017.2707402
关键词
High-speed memory; magnetic tunnel junctions; MRAM scaling; spin Hall effect; spin-orbit torque
资金
- Semiconductor Research Corporation
- Cornell Center for Material Research through NSF MRSEC program [DMR-1120296]
- Cornell NanoScale Facility, a node of the National Nanotechnology Infrastructure Network, through NSF [ECCS-0335765]
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the potential to provide a scalable solution for embedded memory. We demonstrate a net reduction in the critical charge current for spin torque-driven magnetization reversal via using spin-orbit mediated spin current generation. We scaled the dimensions of the spin-orbit electrode to 400 nm and the nanomagnet to 270 nm x 68 nm in a three-terminal spin-orbit torque, magnetic tunnel junction (SOT-MTJ) geometry. Our estimated effective spin Hall angle is 0.15-0.20 using the ratio of zero-temperature critical current from spin Hall switching and estimated spin current density for switching the magnet. We show bidirectional transient switching using spin-orbit generated spin torque at 100 ns switching pulses reliably followed by transient read operations. We finally compare the static and dynamic response of the SOT-MTJ with transient spin circuit modeling showing the performance of scaled SOT-MTJs to enable nanosecond class non-volatile MTJs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据