期刊
CRYSTENGCOMM
卷 17, 期 48, 页码 9264-9295出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ce01130b
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资金
- University Grants Commission (UGC) under 'University with Potential for Excellence (UPEII)' scheme
- Council of Scientific and Industrial Research (CSIR), Government of India
Having the benefit of several features such as low cost, straightforward processing, easy fabrication, large area deposition and physical flexibility, low temperature solution processed electronic devices have gained traction in the eyes of the research community as the difficulties associated with conventional higher temperature crystalline semiconductor devices are incrementally rendering them outdated. Over the last decade, amongst metal oxides, ZnO with its rich variety of nanoforms has been documented as the candidate with the highest economic impact by virtue of its diverse use in a plethora of electronic and optoelectronic applications relying on its associated unique functional features such as high mobility, excellent thermal stability and high transparency. To date, most review articles in the literature focused on ZnO nanostructures realized via the vapour phase method whereas a comprehensive study on solution processed nanoforms and their widespread use is still lacking. The current article mainly highlights an overview of recent developments in multi-dimensional ZnO nanoarchitectures processed via low temperature, rational approaches and their functional properties in field emission devices and environmental remediation. In addition to these descriptions of controlled morphology design and the usage perspective, significant issues pertinent to such geometrical evolution and device performance determination and the possible outlook for low temperature research on ZnO are also described.
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