期刊
NANOMATERIALS
卷 10, 期 11, 页码 -出版社
MDPI
DOI: 10.3390/nano10112208
关键词
ZnGa2O4; spinel structure; wide-bandgap; photodetector; phosphor; gas sensor
类别
资金
- Ministry of Science and Technology (Taiwan, R.O.C.) [108-2221-E-005-028-MY3, 109-2221-E-009-143-MY3, 109-2811-E-005-504, 109-2811-E-005 -508-MY2]
- Innovation and Development Center of Sustainable Agriculture from The Featured Areas Research Center Program
Spinel ZnGa2O4 has received significant attention from researchers due to its wide bandgap and high chemical and thermal stability; hence, paving the way for it to have potential in various applications. This review focuses on its physical, optical, mechanical and electrical properties, contributing to the better understanding of this material. The recent trends for growth techniques and processing in the research and development of ZnGa2O4 from bulk crystal growth to thin films are discussed in detail for device performance. This material has excellent properties and is investigated widely in deep-ultraviolet photodetectors, gas sensors and phosphors. In this article, effects of substrate temperature, annealing temperature, oxygen partial pressure and zinc/gallium ratio are discussed for device processing and fabrication. In addition, research progress and future outlooks are also identified.
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