期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 11, 页码 4645-4648出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3013238
关键词
Diamond-like carbon(DLC); junction termination (JT); power semiconductor devices; TCAD modeling; variation of lateral doping (VLD)
资金
- HITACHI-ABB Power Grids, Switzerland
The sensitivity of discrete large-area power devices to the design aspects of the termination region and to the charging effects of the electroactive passivation layer on top is presented in this work. The junction termination featuring the variation of lateral doping (VLD) is revisited for such devices by focusing on the interaction with the passivationmaterial on top. To this purpose, an ideal dielectric (SiO2) is compared with differently-doped diamond-like carbon (DLC) by incorporating the passivation layer in the TCAD setup. The simulation analysis rigorouslyexplains the impact of the DLC material on the layout reoptimization of a specific reference diode.
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