期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 11, 页码 4765-4769出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3022004
关键词
Band-to-band tunneling (BTBT); displacement defect; radiation effect; subthreshold swing; Technology Computer-Aided Design (TCAD) simulation; tunneling field-effect transistor (TFET)
资金
- Electronic Design Automation (EDA) Tool Program of the IC Design Education Center (IEDC), Republic of Korea
The impact of a single displacement defect on the performance of tunnelingfield-effect transistors (TFETs) is studied. The OFF-state leakage current and subthreshold swing of the TFET are found to degrade by the single point defect. The degradation depends on the trap energy level; the impact due to a deep trap is greater than that due to a shallow trap. The degradation becomes more profound as the defect locationmoves a certain distance fromthe source into the channel. The ON- state current is nearly unaffected by the same defect. The single defect effects were found to be more prominent for thinner channel devices.
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