期刊
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 64, 期 10, 页码 8268-8276出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2017.2703910
关键词
High frequency; output capacitance; parasitic components; second-order linear system model; silicon carbide (SiC) power metal-oxide-semiconductor fieldeffect transistor (MOSFET); switching loss
资金
- State Key Program of National Science Foundation of China [61234006]
- National Natural Science Foundation of China [61674026]
- Science Challenge Project
The reduced chip size and unipolar current conduction mechanism make silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) suitable for high-frequency power electronics applications. Modeling the switching process of the SiC power MOSFET with parasitic components is important for achieving higher efficiency and power density system design. Therefore, this paper proposes a new concise yet accurate switching loss model for SiC power MOSFETs. Addressing the limitations in experimental measurements, numerical simulations are conducted to validate the proposed model taking the output capacitance Coss discharge and charge into consideration. The role of the parasitic components in the second-order model is discussed in depth for switching losses. Furthermore, this paper also provides guidelines in designing the gate driver for ultrafast SiC power MOSFETs.
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