期刊
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 64, 期 10, 页码 8364-8372出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2017.2694413
关键词
High-temperature electronics; pulse width modulation (PWM); silicon carbide (SiC); wide bandgap integrated circuits (ICs)
资金
- National Science Foundation [IIP1237816]
- Directorate For Engineering
- Div Of Industrial Innovation & Partnersh [1465243] Funding Source: National Science Foundation
This paper describes a silicon carbide pulse width modulation (PWM) signal generator in the 1.2 mu m HiT-SiC CMOS process developed by Raytheon Systems Ltd. The design features a 6-b binary input, which allows for setting a system's duty cycle. The results presented in this paper utilize a field programmable gate array board in the test setup to dynamically set the duty cycle by controlling each bit. A control current is also available to give the user added flexibility for tuning the duty cycle. Experimental results show the duty cycle range of the PWM generator to be between 4.7% and 95.2% at 400 degrees C. Sustained operation of the circuit is demonstrated over a period of 50 h at 300 degrees C. Finally, the PWM generator is evaluated in the operation of a boost converter.
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