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Review of Silicon Carbide Power Devices and Their Applications

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IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 64, 期 10, 页码 8193-8205

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2017.2652401

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Power converter; Power device; review; silicon carbide (SiC)

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Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

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