期刊
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 64, 期 10, 页码 8193-8205出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2017.2652401
关键词
Power converter; Power device; review; silicon carbide (SiC)
Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.
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