期刊
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 64, 期 11, 页码 9012-9022出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2017.2719599
关键词
Enhancement mode; failure analysis; Gallium Nitride (GaN) cascode; GaN High-Electron-Mobility Transistors (GaN HEMTs); GaN Metal-Insulator-Semiconductor HEMTs (MISHEMTs); hard switch fault; reliability; robustness; Short Circuit (SC); simulation; wide band gap semiconductors
资金
- Spanish Ministry of Economy and Competitiveness [TEC2014-51903-R, RYC-2010-07434, PCIN-2014-057]
- Agencia de Gestio d'Ajuts Universitaris i de Recerca Funds [2014-SGR 1596]
- BSH Fair Cooking Project
This paper studies by experimentation and physics-based simulation the Short-Circuit (SC) capability of several normally-off 600-650 V Gallium Nitride High-Electron-Mobility Transistors (GaNHEMTs): cascodes, p-GaN, and GaN Metal-Insulator-Semiconductor HEMTs (MISHEMTs). As a result, cascodes present the worst SC ruggedness. By contrast, p-GaN gate HEMTs and MISHEMTs provide a higher SC capability thanks to their strong drain current reduction. In addition, a valuable state-of-the-art about all commercially available technologies is also provided, which demonstrates that current GaN devices do not allow SC capability.
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