期刊
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 64, 期 10, 页码 8299-8309出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2017.2711579
关键词
DC circuit breaker; gate control; series connection; SiC MOSFET; voltage balancing
资金
- National Key Basic Research Program of China (973 Program) [2015CB251001, 2015CB251004]
This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two seriesconnected SiC MOSFETs with the proposed circuit only require a single standard gate driver to achieve the gate control and voltage balancing during both steady-state and switching transition. Moreover, the proposed circuit is only composed of ten passive components. Therefore, the proposed circuit provides a low-cost and highly reliablemethod to increase the blocking voltage of the SiC MOSFET. The operation principles of the proposed circuit are theoretically analyzed. In addition, the high-blocking-voltage device is not only required in switching-mode power supply (SMPS) but also in dc-breaker applications. The proposed circuit is then modified to make it suitable to the dc-breaker applications. The simulation and experimental results validate the effectiveness and superiority of the proposed circuit in both SMPS and dc-breaker applications.
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