期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 11, 页码 4746-4751出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2750763
关键词
III-V; InAs-InGaAsSb-GaSb; nanowire; transistor; tunnel field-effect transistor (TFET)
资金
- Swedish Foundation for Strategic Research
- Swedish Research Council
- European Union Seventh Framework Program E2SWITCH [619509]
Tunnel field-effect transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at VDS = 0.1 V) are characterized in this paper. Based on 88 devices, the impact of the low subthreshold swing on the overall performance is studied. Furthermore, correlation between parameters that are important for device characterization is determined.
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