期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 2, 页码 438-446出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2641476
关键词
Hysteresis; thin-film transistor (TFT); metal oxide; nonvolatile memory (NVM)
资金
- NSFC [61501401, 61574126]
- Partner State Key Laboratory on Advanced Displays and Optoelectronics Technologies [ITC-PSKL12EG02]
- Research Fund of Educational Department [Y201329310]
- National Science Foundation of Zhejiang Province, China [LY16F010006]
Hysteresis in the current-voltage characteristics of a ZnO thin-film transistor (TFT) has been studied. Electric dipoles at the interface of the dielectric and the channel have been proposed as the agents responsible for the hysteresis. From experimental results and theoretical analysis, the water diffusing into the active layer is found as the main origin of the hysteresis. Based on this finding, devices free of hysteresis were obtained by using heat treatment and a passivation layer to control water diffusion in the fabrication process. Conversely, the hysteresis characteristics can be engineered so as to benefit the application of electronicmemory. The function of the TFT device that serves as a memory element was also investigated and demonstrated in this paper. Owing to its low temperature process and simplified structure (compared with the FeRAM), 3-D stacked or even transparent nonvolatile memory would be its potential application.
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