4.6 Article

Buffer Layer Engineering for High (≥1013 cm-2) 2-DEG Density in ZnO-Based Heterostructures

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 3, 页码 1015-1019

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2647258

关键词

2-D electron gas (2-DEG) density; MgZnO/CdZnO heterostructure; polarization

资金

  1. DeitY, Ministry of Electronics and Information Technology, Government of India
  2. DST, Government of India

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In this paper, we report on the prospect of achieving very high values (>= 10(13) cm(-2)) of 2-D electron gas (2-DEG) density in ZnO-based heterostructuresthrough buffer layer engineering. A physics-based analytical model is developed and utilized to demonstrate up to 25x higher 2-DEG values in MgZnO/CdZnO as compared with that in the MgZnO/ZnO heterostructure at lower Mg composition of 0.10 in barrier layer. It is shown that a lower spontaneous polarization in buffer layer due to more electronegative Cd and higher lattice constant of CdZnO, which introduces tensile piezoelectric strain in the barrier layer, favorably add up, and increase polarizationdifference at barrier-buffer interface, which eventually enhances 2-DEG density. This paper demonstrates new opportunities to effectively utilize buffer layer properties to significantly improve the 2-DEG sheet density (similar to 4 x 10(13) cm(-2)) in ZnO heterostructures.

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