期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 7, 页码 2826-2834出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2706090
关键词
Current collapse; dynamic R-ON; power electronics
资金
- UK EPSRC PowerGaN [EP/K0114471/1]
- ENIAC under Project E2COGaN
- EPSRC [EP/N031563/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/N031563/1] Funding Source: researchfish
GaN-on-Si power switching transistors that use carbon-doped epitaxy are highly vulnerable to dynamic R-ON dispersion, leading to reduced switching efficiency. In this paper, we identify the causes of this dispersion using substrate bias ramps to isolate the leakage paths and trapping locations in the epitaxy and simulation to identify their impact on the device characteristics. It is shown that leakage can occur both vertically and laterally, and we suggest that this is associated not only with bulk transport, but also with extended defects as well as hole gases at heterojunctions. For exactly the same epitaxial design, it is shown using a leaky dielectric model that depending on the leakage paths, dynamic R-ON dispersion can vary between insignificant and infinite. An optimum leakage configuration is identified to minimize dispersion requiring a resistivity which increases with depth in the buffer stack. It is demonstrated that leakage through the undoped GaN channel is required over the entire gate to drain gap, and not just under the contacts, in order to fully suppress dispersion.
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