期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 4, 页码 1742-1750出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2668520
关键词
Analytical model; ion-sensitive FET (ISFET); junctionless (JL) MOSFET; pH-sensor; sensitivity; simulation
资金
- University Grants Commission, Government of India [4009]
- University of Delhi through the Ministry of Science and Technology, Department of Science and Technology, Government of India [RC/2015/9677, SR/S3/EECE/0063/2012]
In this paper, an analytical model has been developed for junctionless silicon on insulator ion-sensitive FET for pH sensing applications. The pH sensors detect the change of the hydrogen ion concentration in the aqueous solution. The modeled results show good agreement with the simulation results obtained by using Sentaurus. The electrolyte region has been considered by changing appropriate intrinsic semiconductor material in which the electron and hole charges represent the mobile ions in the aqueous solution. The effect of pH on surface potential, threshold voltage, and drain current has been investigated through model and simulations. In addition, the impact of different gate oxide materials, which act as adhesion layer, has been investigated. The pH response is defined as the amount of threshold voltage shift when the pH (in the injected solution) is varied from lower to higher values. Effect of the electrolyte region thickness on the pH sensitivity has also been discussed in this paper.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据