期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 3, 页码 1399-1403出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2656802
关键词
FinFET; hybrid FinFET plus NEMS; leakage current; NEMS switches; power gating; static energy reduction
Due to its infinite OFF resistance, Nano-Electro-Mechanical Switches (NEMS) have been recently proposed to reduce leakage current during the standby mode in large-scale Digital ICs in nano regime area. However, detailed analysis of the conditions at which the NEMS devices will have impact is missing. In this brief, the technique of power gating is analyzed with a NEMS switch using detailed circuit level simulations to obtain the conditions under which one can obtain net energy savings as compared with FinFET-based power gating. Finally, applicability in the energy reduction on a futuristic system-on-chip for mobile platform made using 14 nm gate length FinFET device is evaluated.
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