期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 1, 页码 121-129出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2631544
关键词
Magnetic random access memory (MRAM); negative differential resistance (NDR); read disturbance; read margin; reliability; tunneling diode; tunneling FET; write termination
The adoption of spin-transfer torque random access memory (STT-RAM) into nonvolatile memory systems faces three major obstacles: high write energy, low sensing margin, and high read disturbance. Many designs have been suggested to resolve each of these challenges separately and at the cost of significant overhead. We propose a single low-overhead solution to all these problems without changing the underlyingmemory architecture by using negative differential resistance devices like tunnel diodes or tunnel field-effect transistors to assist the STT-RAM write and read process. We show through simulations that the proposed designs can dramatically improve the write and read energy efficiency and sensing margins while minimizing the read disturbance, even after accounting for process variations. Our results open a design path for energy-efficient and reliable STT-RAM technologies.
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