期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 10, 页码 4161-4166出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2741971
关键词
Detectivity; electrical characterization; high-resolution X-ray diffraction (HRXRD); internal photoconductive gain; photoluminescence (PL); pulsed laser deposition; ultraviolet (UV) photodetectors; ZnO thin films
Studies have been carried out on the enhancement of responsivity and detectivity of the ZnO thin-films-based ultraviolet photodetectors by introducing an AlN buffer layer on silicon substrate. The ZnO film grown with AlN buffer layer established an epitaxial relation with the substrate and was found to show improved crystallinity with excellent optical properties. A strong and narrow photoluminescence emission was observed on the ZnO film grown with buffer layer, while a defect related broad emission was dominated on the film without buffer layer. The photodetectors showed a higher responsivity (R-lambda) of 1.03x10(4) A/W with a specific detectivity (D*) of 5.21 x 10(12) cm.Hz(1/2).W-1 at an applied bias of 3 V due to their excellent crystal quality.
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