Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate Displays

This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si: H TFT) gate driver with short rising and falling times. The driving capability of the a-Si: H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05 mu s, 1.31 mu s, and 27.1 V, respectively, after an accelerated lifetime test at 70 degrees C for 120 h.