4.4 Article

Atom-Based RF Electric Field Metrology: From Self-Calibrated Measurements to Subwavelength and Near-Field Imaging

期刊

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TEMC.2016.2644616

关键词

Atom-based metrology; electromagnetically induced transparency (EIT); field sensors and probe; near-field modeling and measurements; subwavelength imaging

资金

  1. Defense Advanced Research Projects Agency under QuASAR Program
  2. NIST through Embedded Standards program

向作者/读者索取更多资源

We discuss a fundamentally new method for electric (E) field strength (V/m) metrology applicable to the near-field. This new approach is significantly different from currently used field measurement techniques in that it is based on the interaction of radio-frequency (RF) E-fields with Rydberg atoms (alkali atoms placed in a glass vapor cell that are excited optically to Rydberg states). The applied RF E-field alters the state of the atoms. The Rydberg atoms act like an RF-to-optical transducer, converting an RF E-field strength to an optical-frequency response. In this new approach, we employ the phenomena of electromagnetically induced transparency (EIT) and Autler-Townes splitting. The RF transition in the four-level atomic system causes a split of the EIT transmission spectrum of a probe laser into two peaks. This splitting is easily measured and is directly proportional to the applied RF E-field amplitude. The significant dipole response of Rydberg atoms enables this technique to make self-calibrating measurements over a large frequency band including 500 MHz to 500 GHz (and possibly up to 1THz and down to 10s of megahertz). In this paper, we report on our results in the development of this metrology approach, including the first fiber-coupled vapor-cell for E-field measurements. We also discuss key applications, including self-calibrated measurements, millimeter-wave and sub-THz measurements, field mapping, and sub-wavelength and near-field imaging. We show results for mapping the fields inside vapor cells, for measuring the E-field distribution along the surface of a circuit board, and for measuring the near-field at the aperture in a cavity. We also discuss the uncertainties of this measurement technique.

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