期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
卷 64, 期 8, 页码 2124-2133出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSI.2017.2692519
关键词
Memristor; resistive switching; crossbar; adaptive synchronization; nonlinear circuits
资金
- European Cooperation in Science and Technology under Grant COST Action [IC1401]
- Chilean Government under the Research CONICYT FONDECYT Post-Doctorado [3160042/2016]
- RILTUS Project
Nonlinear circuits may be synchronized with interconnections that evolve in time incorporating mechanisms of adaptation found in many biological systems. Such dynamics in the links is efficiently implemented in electronic devices by using memristors. However, the approach requires a massive amount of interconnections (of the order of N-2, where N is the number of nonlinear circuits to be synchronized). This issue is solved in this paper by adopting a memristor crossbar architecture for adaptive synchronization. The functionality of the structure is demonstrated, with respect to different switching characteristics, via a simulation-based evaluation using a behavioral threshold-type model of voltage-controlled bipolar memristor. In addition, we show that the architecture is robust to device variability and faults: quite surprisingly, when faults are localized, the performance of the approach may also improve as adaptation becomes more significant.
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