4.4 Article

BMO-Doped REBCO-Coated Conductors for Uniform In-Field Ic by Hot-Wall PLD Process Using IBAD Template

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TASC.2017.2660305

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2G HTS Conductors; critical current; laser ablation; rare earth compounds

资金

  1. Grants-in-Aid for Scientific Research [16H02334] Funding Source: KAKEN

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BaMO3 (BMO, M: Zr or Hf)-doped REBCO-coated conductors were prepared by Hot-Wall PLD method on IBAD template. The highest J(c) was obtained for BaHfO3- doped EuBCO. Quite strong pinning force density ( F-p) of 1.6 TN/ m(3) was observed at 4.2 K, 15 T, for a sample deposited with growth rate of similar to 5 nm/s. It had strong c-axis correlated pinning at the temperature above 20 K with the matching field of similar to 5 T. A 45-m- long sample was formed by productive high growth rate over 20 nm/s, being consistent with commercial nondoped conductors. It had also large I-c of 1687 A/cm and Fp of 0.96 7 TN/ m3 was obtained at 4.2 K, 15 T. The end-to-end longitudinal Ic homogeneity ( sigma) at 77 K in low field was evaluated to be 2.2% by magnetization. Transport in-fields Ic were also measured for the both end points at 30 K, 2 T, resulting in 1863 and 1883A/cm, respectively

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