Imaging of nearly flat band induced atomic-scale negative differential conductivity in ABC-stacked trilayer graphene

Despite recent transport studies of ABC-stacked multilayer graphene systems revealed various unusual quantum phenomena which arise from the nearly flat electronic bands, their quantum tunneling properties have rarely been addressed. Here we investigate the local tunneling characteristics of a gapped ABC-stacked trilayer graphene (TLG) and report the experimental observation of the nearly flat band induced atomic-site-dependent negative differential conductivity (NDC, characterized by a current drop with increasing voltage) via scanning tunneling spectroscopy (STS) measurements. We show that strong NDC emerges in the gap region next to a sharp STS peak induced by the very flat low-energy dispersion of ABC TLG. The NDC is found to mainly reside on one atomic sublattice of the surface layer due to the strong sublattice and layer localization of the nearly flat bands. The observed NDC behavior is explained by the tunnel-diode mechanism, namely, the coexistence of a sharp flat-dispersion STS peak in which tunneling is strongly enhanced and a subsequent gap region in which tunneling is forbidden. Furthermore, we also find that a local defect could effectively switch off the NDC over a large spatial range. Our result highlights a quantum tunneling effect unique to the graphene-based nearly flat band system and expands the potential application scope of ABC TLG.