期刊
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
卷 27, 期 10, 页码 930-932出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2017.2746678
关键词
Device model; GaN HEMT; RF rectifier; third-quadrant region
Recently, various high-efficiency RF rectifiers have been proposed. In this letter, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of I-D-V-DS characteristics in the third-quadrant region (both drain voltage and drain current are negative). Based on measured characteristic data of an actual GaN HEMT, the device parameters for this model have been decided, and the advantage of the new device model has been confirmed.
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