期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 52, 期 12, 页码 3168-3180出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2017.2750329
关键词
CMOS; deep-tissue implant; flipping-capacitor rectifier (FCR); fully integrated; high efficiency; inductor-less; parallel-synchronized-switch harvesting-on-inductor (P-SSHI); piezoelectric energy harvesting; reconfigurable capacitor array; ultrasound
资金
- Macao Science and Technology Development Fund [FDCT069/2016/A2]
- Research Committee of the University of Macau [MYRG2015-AMSV-00140]
This paper presents a fully integrated piezoelectric energy harvesting interface without external components. Instead of relying on bulky external inductors with high quality factor as in the conventional parallel-synchronized-switch harvesting-on-inductor (P-SSHI) approach, we propose a flipping-capacitor rectifier (FCR) topology to achieve voltage inversion of the piezoelectric energy harvester through a reconfigurable capacitor array. This fundamentally preserves a fully integrated solution without inductors while achieving a high-energy extraction capability. Measurement results from FCR1 using discrete components shows an output power enhancement of up to 3.4x, which is close to the theoretical prediction. We also fabricated a seven-phase FCR3 with four MIM capacitors and 21 switches using a 0.18-mu m 1.8/3.3/6 V CMOS process, occupying an active area of similar to 1.7 mm(2). Additionally, we implemented an active rectifier based on a common-gate comparator with phase alignment to ensure high-speed operation while minimizing the diode voltage drop. A phase generate-and-combine circuit eliminates redundant switching activities. Systematic optimization of the three main energy loss mechanisms during the finite flip time: 1) phase offset; 2) incomplete charge transfer; and 3) reduced conduction time, is also introduced. Measurement results show that the output power enhancement can reach up to 4.83x at an excitation frequency of 110 kHz.
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