期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 23, 期 1, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2016.2537980
关键词
High peak power; MoS2 saturable absorber; solid-state 2 mu m laser
资金
- National Natural Science Foundation of China [61378022, 61475088, 61475177]
- Open Foundation of State Key laboratory of Crystal Material of Shandong University [KF1403]
- Independent Innovation Foundation of Shandong University, IIFSDU [2013HW013]
- Shandong University [2015WLJH38]
The passive Q-switching characteristics of a diode-pumped Tm,Ho:YAP laser at 2 mu m based on a MoS2 saturable absorber (SA) is presented for the first time. Pulses as short as 435 ns under a repetition rate of about 55 kHz were generated at the incident pump power of 8.4 W, corresponding to the pulse peak power up to 11.3 W. This is, to the best of our knowledge, the highest pulse peak power, ever obtained from MoS2 based passively Q-switched 2-mu m lasers. The experimental results sufficiently validated the feasibility of MoS2 as SA for solid-state 2-mu m lasers.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
