期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 46, 页码 51598-51606出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c13233
关键词
all 2D heterostructure devices; band-to-band tunneling; negative differential resistance; subthreshold swing; type III band alignment
资金
- Samco Science and Technology Foundation
- Canon Foundation
- MEXT [JPMXP0112101001]
- JSPS Core-to-Core Program, A. Advanced Research Networks
- JSPS A3 Foresight Program
- JSPS KAKENHI [JP20H00354, JP19H00755, 19K21956, 18H03864, 19H02561]
- CREST [JPMJCR15F3]
- PRESTO [JPMJPR17NB]
- University of Tokyo [2018B7580, 2019A7451]
- Grants-in-Aid for Scientific Research [18H03864, 19H02561, 19K21956] Funding Source: KAKEN
( )Van der Waals heterostructures are the ideal material platform for tunnel field-effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) because of ideal, dangling bondfree heterointerfaces. However, achieving subthreshold swing (SS) values lower than 60 mV dec(-1) of the Boltzmann limit is still challenging. In this work, we systematically studied the band alignment and heterointerface quality in n-MoS2 channel heterostructure TFETs. By selecting a p'-MoS2 source with a sufficiently high doping level, stable gate modulation to a type III band alignment was achieved regardless of the number of MoS2 channel layers. For the gate stack formation, it was found that the deposition of Al2O3 as the top gate introduces defect states for the generation current under reverse bias, while the integration of a hexagonal boron nitride (h-BN) top gate provides a defect-free, clean interface, resulting in the BTBT dominant current even at RT. All 2D heterostructure TFETs produced by combining the type III n-MoS2/p(+)-MoS2 heterostructure with the h-BN top-gate insulator resulted in low SS values at RT.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据