期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 8, 页码 1023-1026出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2721638
关键词
Analog memory; linearity; neuromorphic; PCMO; RRAM; resistive switching; synapse device
资金
- PIONEER Research Center Program through the National Research Foundation of Korea, Ministry of Science, ICT & Future Planning [2012-0009460]
- National Research Foundation of Korea [2013M3C1A3008992, 2012-0009461] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report on a 1-transisor/2-resistor (1T2R) synapse device with improved conductance linearity and conductance ratio under an identical pulse condition for hardware neural networks with high pattern-recognition accuracy. Utilizing an additional series-connected resistor, the conductance linearity of a synapse device was significantly improved owing to the reduced initial voltage drop on an resistive RAM (RRAM) device during depression conditions. Moreover, to maximize the conductance ratio of a synapse device, we utilized a steep subthreshold region of an MOSFET by a parallel connection of an RRAM and a transistor. A small change in voltage on the RRAM directly controlled the gate bias of the MOSFET, which causes a large change in the drain current. Compared with a conventional RRAM synapse device, the 1T2R synapse device shows an improved conductance linearity and conductance ratio (>x100). Finally, we confirmed an excellent classification accuracy by using a neural network simulation based on a multilayer perceptron.
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