4.6 Article

Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

期刊

IEEE ELECTRON DEVICE LETTERS
卷 38, 期 2, 页码 179-182

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2645946

关键词

1T1R RRAM; Boolean logics; nonvolatile; logic in memory

资金

  1. National Natural Science Foundation of China [61674061, 61504045]
  2. National Key Research and Development Plan of MOST of China [2016YFA0203800]

向作者/读者索取更多资源

Nonvolatile stateful logic through RRAM is a promising route to build in-memory computing architecture. In this letter, a logic methodology based on 1T1R structure has been proposed to implement functionally complete Boolean logics. Arbitrary logic functions could be realized in two steps: initialization and writing. An additional read step is required to read out the logic result, which is in situ stored in the nonvolatile resistive state of the memory. Cascade problem in building larger logic circuits is also discussed. Our 1T1R logic device and operation method could be beneficial for massive integration and practical application of RRAM-based logic.

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