期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 2, 页码 179-182出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2645946
关键词
1T1R RRAM; Boolean logics; nonvolatile; logic in memory
资金
- National Natural Science Foundation of China [61674061, 61504045]
- National Key Research and Development Plan of MOST of China [2016YFA0203800]
Nonvolatile stateful logic through RRAM is a promising route to build in-memory computing architecture. In this letter, a logic methodology based on 1T1R structure has been proposed to implement functionally complete Boolean logics. Arbitrary logic functions could be realized in two steps: initialization and writing. An additional read step is required to read out the logic result, which is in situ stored in the nonvolatile resistive state of the memory. Cascade problem in building larger logic circuits is also discussed. Our 1T1R logic device and operation method could be beneficial for massive integration and practical application of RRAM-based logic.
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