期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 5, 页码 568-571出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2685435
关键词
Access device; selector; Ovonic threshold switching material; high-density memory array; storage class memory
资金
- POSTECH-Samsung Electronics Research Project
In this letter, simple binary Ovonic threshold switching (OTS) material with outstanding selector device performance has been demonstrated. Even with its simple material composition and easy fabrication process, the selector device with the binary OTS material showed excellent selector performance such as high-OFF resistance (> 1 G Omega at 0.1 V), low-ON resistance (< 1 k Omega at 2.0 V), extremely sharp switching slope (< 1 mV/dec), fast operating speed (t(transition) < 2 ns, t(delay) < 7 ns), high endurance (> 10 8 cyclesof 150 ns pulse), high electrical stability (> 1ks at 1.2 V), and high thermal stability (> 400 degrees C /30 min). Furthermore, conduction mechanism of the OTS has been explained by Poole-Frenkel-based analytical modeling.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据