Black Phosphorus p- and n-MOSFETs With Electrostatically Doped Contacts

This letter presents a novel device, which is used to realize black phosphorus (BP) p-MOSFETs and n-MOSFETs in a single structure by means of electrostatically doped source and drain regions. The devices achieve ION/IOFF of greater than 10(4) at V-DS = 1.0 V with only a 14% increase in subthreshold slope from V-DS = 0.1 to 1.0 V. These results represent a substantial improvement in OFF-state characteristics over conventional Schottky-contacted BP MOSFETs at high V-DS and also pave the way for the realization of novel devices, such as tunneling field-effect transistors.